2SK2462
DESCRIPTION
The 2SK2462 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS
(in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2
FEATURES
- Low On-Resistance
RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A)
15.0 ±0.3 3 ±0.1 4 ±0.2
- Low Ciss Ciss = 790 p F TYP.
- Built-in G-S Gate Protection Diodes
- High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)- VDSS VGSS ID(DC) ID(pulse) 100 ± 20 ± 15 ± 60 30 2.0 150 15 22.5 V V A A W W ˚C
13.5 MIN.
12.0 ±0.2
RDS(on)2 = 0.17 Ω MAX. (@ VGS = 4 V, ID = 8.0 A)
0.7 ±0.1 2.54
1.3 ±0.2 1.5 ±0.2 2.54 0.65 ±0.1
2.5 ±0.1
Total Power Dissipation (Tc = 25 ˚C) PT1 Total Power Dissipation (TA = 25 ˚C) PT2 Channel Temperature Storage Temperature Single Avalanche Current-
- Single Avalanche Energy-
- - PW ≤ 10 µs, Duty Cycle ≤ 1 % Tch Tstg IAS EAS
1. Gate 2. Drain 3. Source 1 2 3
- 55...
