2SK2724 fet equivalent, switching n-channel power mos fet.
* Low On-Resistance
3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN.
RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A)
* Low Ciss Ciss .
PACKAGE DIMENSIONS (in millimeter)
4.5 ±0.2 3.2 ±0.2 2.7 ±0.2
10.0 ±0.3
FEATURES
* Low On-Resistance
3 ±0.1 4 ±0.
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