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2SK2726
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-453 B 3rd. Edition Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings
Outline
TO–220CFM
D
G 1 2 3
S
1. Gate 2. Drain 3. Source
2SK2726
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3 3 2 1
Ratings 500 ±30 7 28 7 7 2.
2SK2726 Datasheet
