2SK3306
DESCRIPTION
The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
- Low gate charge : 5 QG = 13 n C TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
- Gate voltage rating : ±30 V
- Low on-state resistance : RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
- Avalanche capability ratings
- Isolated TO-220(MP-45F) package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tch Tstg
500 ±30 ±5 ±20 35 2.0 150
- 55 to +150 5.0 125
V V A A W W °C °C A m J
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch...
