2SK3357 datasheet, mosfet equivalent, NEC

Features and benefits

* Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 38 A)
* Low Ciss: Ciss = 9800 pF TYP.

Application

FEATURES
* Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 8.8 mΩ MAX. (V.

Description

The 2SK3357 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
* Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 38 A)
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