* Super low on-state resistance: 5 5 RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4 V, ID = 38 A)
* Built-in gate protection diode 5
* Low Ciss: Ciss = 6300 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Vo
2SK3356
NEC
38.01 KB
N-channel mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3356 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3356 PACKAGE TO-.
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