* Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 38 A)
* Low Ciss: Ciss = 9800 pF TYP.
* Built-in gate protection diode (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Sourc
2SK3357
NEC
68.84 KB
N-channel mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3357 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3357 PACKAGE TO-.
📁 Related Datasheet
2SK3351 N-Channel MOSFET (Sanyo Semicon Device)
2SK3352 N-Channel MOSFET (Sanyo Semicon Device)
2SK3353 N-Channel MOSFET Transistor (Inchange Semiconductor)
2SK3353 N-Channel MOSFET (NEC)
2SK3354 N-Channel MOSFET Transistor (Inchange Semiconductor)
2SK3354 N-Channel MOSFET (NEC)
2SK3355 N-Channel MOSFET (NEC)
2SK3356 N-Channel MOSFET (NEC)
2SK3358 N-Channel MOSFET (NEC)
2SK3359 N-Channel MOSFET (NEC)
