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2SK3359 N-Channel MOSFET

2SK3359 Description

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3359 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3359.
The 2SK3359 is N-Channel MOS Field Effect Transistor designed for high current switching applications. Low on-state resistance RDS.

2SK3359 Features

* Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) 5 5 RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
* Low Ciss: Ciss = 4900 pF TYP.
* Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) G

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Datasheet Details

Part number
2SK3359
Manufacturer
NEC
File Size
48.34 KB
Datasheet
2SK3359_NEC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET NEC
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