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2SK3430 - N-Channel MOSFET

Description

The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance: 5 5 RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A).
  • Built-in gate protection diode (TO-220AB) 5.
  • Low Ciss: Ciss = 2800 pF TYP.

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Datasheet preview – 2SK3430

Datasheet Details

Part number 2SK3430
Manufacturer NEC
File Size 48.58 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3430 Datasheet
Additional preview pages of the 2SK3430 datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3430 2SK3430-S 2SK3430-Z PACKAGE TO-220AB TO-262 TO-220SMD DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: 5 5 RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) • Built-in gate protection diode (TO-220AB) 5 • Low Ciss: Ciss = 2800 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 40 ±20 ±80 ±200 84 1.
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