3SK222 transistor equivalent, n-channel si dual gate mos field-effect transistor.
* The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR =
–30 dB
PACKAGE DIMENSIONS
(Unit: mm)
0.4 +0.1
.
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.
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