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3SK222 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

Datasheet Summary

Features

  • The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR =.
  • 30 dB.

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Datasheet Details

Part number 3SK222
Manufacturer NEC
File Size 58.20 KB
Description N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR = –30 dB PACKAGE DIMENSIONS (Unit: mm) 0.4 +0.1 –0.05 1.5 +0.2 –0.1 2.8 +0.2 –0.3 • Low Noise Figure: • High Power Gain: • Enhancement Type. NF1 = 1.2 dB TYP. (f = 200 MHz) NF2 = 1.0 dB TYP. (f = 55 MHz) GPS = 23 dB TYP. (f = 200 MHz) (1.8) 0.85 0.95 2.9±0.
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