* Low Noise Figure:
* High Power Gain:
* Automatically Mounting:
* Small Package: NF = 1.8 dB TYP. (f = 900 MHz) GPS = 17 dB TYP. (f = 900 MHz) PACKAGE DIMENSIONS (Unit: mm) 0.4
* 0.05 0.4
* 0.05 0.4
* 0.05 0.16
* 0.06 +0.1 +0.1 Embossed Typ
3SK224
NEC
53.36 KB
N-channel si dual gate mos field-effect transistor.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEA.
📁 Related Datasheet
3SK22 Silicon N-Channel Transistor (Toshiba)
3SK222 N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR (NEC)
3SK223 N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR (NEC)
3SK225 Silicon N Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
3SK226 Silicon N Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
3SK227 Silicon N-Channel 4-pin MOSFET (Panasonic)
3SK228 Silicon NPN Triple Diffused (Hitachi Semiconductor)
3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD (NEC)
3SK207 Silicon N Channel Dual Gate MOS Type FET (Toshiba Semiconductor)
3SK231 MOSFET (NEC)
