3SK224
3SK224 is N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR manufactured by NEC.
FEATURES
- Low Noise Figure:
- High Power Gain:
- Automatically Mounting:
- Small Package: NF = 1.8 d B TYP. (f = 900 MHz) GPS = 17 d B TYP. (f = 900 MHz)
PACKAGE DIMENSIONS
(Unit: mm)
0.4- 0.05 0.4- 0.05 0.4- 0.05 0.16- 0.06
+0.1
+0.1
Embossed Type Taping 4 Pins Mini Mold
2.9±0.2 (1.8) 0.85 0.95
3 4
5°
+0.1
- Suitable for use as RF amplifier in UHF TV tuner.
2.8- 0.1 +0.2 1.5- 0.1
+0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature
- 1 RL ≥ 10 kΩ VDSX VG1S VG2S VG1D VG2D ID PD Tch Tstg ±8 18 (±10)- 1 18 18 25 200 125
- 55 to +125 ±8 (±10)- 1 V V V V m A m W °C °C
0.6- 0.05
+0.1
5°
1.1- 0.1 0.8
+0.2
5°
0 to 0.1
5°
1. 2. 3. 4.
Source Drain Gate 2 Gate 1
Document No. P10576EJ2V0DS00 (2nd edition) (Previous No. TD-2265) Date Published August 1995 P Printed in Japan
+0.1
(1.9)
©
1989...
