Datasheet4U Logo Datasheet4U.com

B1432 - PNP SILICON EPITAXIAL TRANSISTOR

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • High hFE due to Darlington connection hFE ≥ 1,000 @VCE =.
  • 2.0 V, IC =.
  • 10 A).
  • Mold package that does not require an insulation board or insulation bushing.

📥 Download Datasheet

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
B1431 PNP Silicon Epitaxial Transistor
B1453 2SB1453

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High hFE due to Darlington connection hFE ≥ 1,000 @VCE = −2.