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DATA SHEET
SILICON TRANSISTOR
2SC5191
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
www.DataSheet4U.com• Low Voltage Operation, Low Phase Distortion
PACKAGE DRAWINGS (Unit: mm)
2.8±0.2
0.4 +0.1 −0.05
• Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
0.95
1.5
0.65 +0.1 −0.15
• Large Absolute Maximum Collector Current
2.9±0.2
IC = 100 mA • Mini Mold Package EIAJ: SC-59
2
T88
0.95
ORDERING INFORMATION
PART NUMBER 2SC5191-T1
0.3
Marking
0.16 +0.1 −0.06
QUANTITY 3 Kpcs/Reel
PACKING STYLE Embossed tape 8 mm wide. Pin 3 (collector) face to perforation side of the tape. Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2 (Base) face to perforation side of the tape.
1.1 to 1.
C5191 Datasheet
