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J599 - 2SJ599

General Description

The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Key Features

  • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 10 A) RDS(on)2 = 111 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 10 A).
  • Low Ciss: Ciss = 1300 pF TYP.
  • Built-in gate protection diode.
  • TO-251/TO-252 package 2SJ599-Z.

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Part Number Description Manufacturer

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
J598 2SJ598

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ599 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ599 PACKAGE TO-251 TO-252 FEATURES • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low Ciss: Ciss = 1300 pF TYP.