Datasheet4U Logo Datasheet4U.com

2SJ599 - MOS Field Effect Transistor

Key Features

  • Low on-resistance RDS(on)1 = 75 m MAX. (VGS =-10 V, ID = -10 A) RDS(on)2 = 110 m MAX. (VGS = -4.0 V, ID =-10 A) Low Ciss: Ciss = 1300 pF TYP. Built-in gate protection diode +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain t.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ599 P-Channel MOSFET NEC
2SJ599 P-CHANNEL POWER MOSFET Renesas
2SJ599-Z-E1-AZ 60V P-Channel MOSFET VBsemi
2SJ590LS DC / DC Converter Applications Sanyo Semicon Device
2SJ591LS DC / DC Converter Applications Sanyo Semicon Device

Other Datasheets by Kexin Semiconductor

Part Number Description
2SJ599-Z P-Channel MOSFET
2SJ598 MOS Field Effect Transistor
2SJ598-Z P-Channel MOSFET
2SJ506S P-Channel MOSFET
2SJ527S Hight Speed Power Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOSFICET MOS Field Effect Transistor 2SJ599 Features Low on-resistance RDS(on)1 = 75 m MAX. (VGS =-10 V, ID = -10 A) RDS(on)2 = 110 m MAX. (VGS = -4.0 V, ID =-10 A) Low Ciss: Ciss = 1300 pF TYP. Built-in gate protection diode +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.