2SJ599
2SJ599 is MOS Field Effect Transistor manufactured by Kexin Semiconductor.
Features
Low on-resistance RDS(on)1 = 75 m MAX. (VGS =-10 V, ID = -10 A) RDS(on)2 = 110 m MAX. (VGS = -4.0 V, ID =-10 A) Low Ciss: Ciss = 1300 p F TYP. Built-in gate protection diode
+0.2 9.70 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+0.15 1.50 -0.15
+0.15 5.55 -0.15
0.80+0.1 -0.1
0.127 max
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
+0.15 0.50 -0.15
+0.28 1.50 -0.1
+0.25 2.65 -0.1
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse)
- Power dissipation
TC=25
TA=25
Channel temperature
Storage temperature
- PW 10 s, duty cycle 1 %
Symbol
Rating
Unit
VDSS
-60
VGSS...
