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2SJ599 - P-CHANNEL POWER MOSFET

General Description

The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Key Features

  • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 10 A) RDS(on)2 = 111 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 10 A).
  • Low input capacitance: Ciss = 1300 pF TYP. (VDS =.
  • 10 V, VGS = 0 V).
  • Built-in gate protection diode.
  • TO-251/TO-252 package.

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Datasheet Details

Part number 2SJ599
Manufacturer Renesas
File Size 158.45 KB
Description P-CHANNEL POWER MOSFET
Datasheet download datasheet 2SJ599 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ599 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low input capacitance: Ciss = 1300 pF TYP.