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2SJ599-Z - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-20A.
  • RDS(ON) ＜ 75m Ω (VGS =-10V).
  • RDS(ON) ＜ 111mΩ (VGS =-4V).
  • Low Ciss: Ciss = 1300 pF (TYP. ) Drain Gate Body Diode Gate Protection Diode Source + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 0.15 1 .5 0 -0.15 3.80 + 0.15 5 .5 5 -0.15 +0 0.50 .15 -0.15 +0 1.50 .28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 1 Gate 2 Drain 3 Source.
  • Absol.

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SMD Type MOSFET P-Channel MOSFET 2SJ599-Z ■ Features ● VDS (V) =-60V ● ID =-20A ● RDS(ON) ＜ 75m Ω (VGS =-10V) ● RDS(ON) ＜ 111mΩ (VGS =-4V) ● Low Ciss: Ciss = 1300 pF (TYP.) Drain Gate Body Diode Gate Protection Diode Source + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 0.15 1 .5 0 -0.15 3.80 + 0.15 5 .5 5 -0.15 +0 0.50 .15 -0.15 +0 1.50 .28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -60 V VGS ±20 Continuous Drain Current ID -20 Pulsed Drain Current (Note.1) IDM -50 A Single Avalanche Current (Note.