2SJ599 Datasheet | NEC

DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. .. ORDERING INFORMATION PART NUMBER 2SJ599 2SJ599-Z PACKAGE TO-251 TO-252 FEATURES - Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = - 10 V, ID = - 10 A) RDS(on)2 = 111 mΩ MAX. (VGS = - 4.0 V, ID = - 10 A) - Low Ciss: Ciss = 1300 p F TYP. - Built-in gate protection diode - TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-251) - 60 + 20 + 20 + 50 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg V V A A W W °C °C A m J (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 35 1.0 150 - 55 to +150 - 20 40 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = - 20 V ¡ 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14644EJ1V0DS00 (1st edition) Date Published November 2000 NS CP(K) Printed in Japan © ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance .. Output Capacitance TEST CONDITIONS VDS = - 60 V, VGS = 0 V VGS = + 20 V, VDS = 0 V VDS = - 10 V, ID = - 1 m A VDS...