K3060 fet equivalent, n-channel power mos fet.
* Low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
* Low Ciss: Ciss = 2400 pF TYP.
* Built.
FEATURES
* Low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V.
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