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MC-4R128CEE6C Direct Rambus DRAM RIMM Module

MC-4R128CEE6C Description

PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128CEE6B, 4R128CEE6C Direct RambusTM DRAM RIMMTM Module 128M-BYTE (64M-WORD x 16-BIT) Descriptio.
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications includin.

MC-4R128CEE6C Features

* 184 edge connector pads with 1mm pad spacing
* 128 MB Direct RDRAM storage
* Each RDRAM® has 32 banks, for 256 banks total on module
* Gold plated contacts
* RDRAMs use Chip Scale Package (CSP)
* Serial Presence Detect support
* Operates from

MC-4R128CEE6C Applications

* including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. MC-4R128CEE6B, 4R128CEE6C modules consists of eight 128M Direct Rambus DRAM (Direct RDRAM™) devices (µPD488448). These are extremely high-speed CMOS DRAMs organized

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Datasheet Details

Part number
MC-4R128CEE6C
Manufacturer
NEC
File Size
129.07 KB
Datasheet
MC-4R128CEE6C_NEC.pdf
Description
Direct Rambus DRAM RIMM Module

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Direct Rambus DRAM RIMM Module NEC
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