NE25118 Datasheet - NEC

DUAL-GATE GaAS MESFET

NE25118 Features

* SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER

* LOW CRSS: 0.02 pF (TYP)

* HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz

* LOW NF: 1.1 dB TYP AT 900 MHz

* LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm

* ION IMPLANTATION

* AVAILABLE IN TAPE & REEL OR BULK

NE25118 General Description

The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a 4 pin super min.

NE25118 Datasheet (45.85 KB)

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Datasheet Details

Part number:

NE25118

Manufacturer:

NEC

File Size:

45.85 KB

Description:

Dual-gate gaas mesfet.

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NE25118 DUAL-GATE GaAS MESFET NEC

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NE25118 Features

NE25118 General Description

Datasheet Details

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