NE25118 mesfet equivalent, dual-gate gaas mesfet.
* SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER
* LOW CRSS: 0.02 pF (TYP)
* HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz
* LOW NF: 1.1 dB TYP AT 900 MHz
* .
Drain to Source Voltage, VDS (V)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOL NF GPS BVD.
The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESF.
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