MESFET Datasheet | Specifications & PDF Download

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GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH POWER GAIN: 20 dB (TYP

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GENERAL PURPOSE DUAL-GATE GaAS MESFET NE25139 Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB) FEATURES • SUITABLE FOR USE AS RF AMPLIFIER I

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Noise Figure, NF (dB) Associated Gain, GA (dB) LOW NOISE L TO Ku BAND GaAs MESFET NE76084S FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz

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LOW NOISE L TO Ku-BAND GaAs MESFET NE76038 Noise Figure, NF (dB) Associated Gain, GA (dB) FEATURES • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz • H

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C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUST

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GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF004 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel

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CLX34 HiRel X-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 5

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CLY32 HiRel C-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 1

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Ordering number : ENN7546 2SK1646 N-Channel GaAs MESFET 2SK1646 For C to X-band Local Oscillator and Amplifier Features • Package Dimensions unit :

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DATA SHEET O K I G a A s P R O D U C T S KGL4215 10-Gbps Decision Circuit 0.2µm Gate Length GaAs MESFET Technology February 2000 s s –––––––––––––––

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DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle powe

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LOW NOISE L TO Ku BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.5 Ga 3 2.5 2 1.5 1 NF 0.5 0 1

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www.DataSheet4U.com LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY FEATURES • VERY HIGH fMAX: 100 GHz Optimum Noise Figure, NFOPT (dB)

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www.DataSheet4U.com XX-XXXX; Rev 0; 10/05 Automatic RF MESFET Amplifier Drain-Current Controllers General Description The MAX11014/MAX11015 set and

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PRELIMINARY CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect Transis

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