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Telefunken Electronic
CF930 - N-Channel GaAs MESFET
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NEC
NE-72084 - General Purpose GaAs MESFET
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
NEC
NE76038 - L TO Ku-BAND GaAs MESFET
LOW NOISE L TO Ku-BAND GaAs MESFET NE76038 Noise Figure, NF (dB) Associated Gain, GA (dB) FEATURES • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz • H.
ETC
CF300 - N- Channel-GaAs-MESFET-Tetrode Depletion Mode
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NEC Electronics
NE500199 - C-Band Medium Power GaAs MESFET
C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUST.
Mimix Broadband
CF004 - GaAs Pseudomorphic HEMT and MESFET Chips
GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF004 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel.
Infineon Technologies AG
CLX34 - HiRel X-Band GaAs Power-MESFET
CLX34 HiRel X-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 5.
Alpha Industries
AFM06P2-000 - Power GaAs MESFET
Ka Band Power GaAs MESFET Chip AFM06P2-000 Features s 22.5 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficien.
Sanyo Semicon Device
2SK1646 - N-Channel GaAs MESFET
Ordering number : ENN7546 2SK1646 N-Channel GaAs MESFET 2SK1646 For C to X-band Local Oscillator and Amplifier Features • Package Dimensions unit :.
NEC
NE721S01 - GENERAL PURPOSE L TO X-BAND GaAs MESFET
www.DataSheet4U.com GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES • HIGH POWER GAIN: 7 dB TYP at 12 GHz • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz .
Cree
CRF24010 - SiC RF Power MESFET
PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect Transis.
NEC
NE76084S - LOW NOISE L TO Ku BAND GaAs MESFET
Noise Figure, NF (dB) Associated Gain, GA (dB) LOW NOISE L TO Ku BAND GaAs MESFET NE76084S FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz.
Infineon Technologies AG
CLX30 - HiRel X-Band GaAs Power-MESFET
CLX30 HiRel X-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 5.
Infineon Technologies AG
CLY32-00 - HiRel C-Band GaAs Power-MESFET
CLY32 HiRel C-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 1.
Infineon Technologies AG
CLY35-05 - HiRel C-Band GaAs Power-MESFET
CLY35 HiRel C-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 1.
Alpha Industries
AFM06P3-213 - Power GaAs MESFET
Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Ad.
Sanyo Semicon Device
2SK1645 - N-Channel Ga As MESFET
Ordering number : ENN*0000 2SK1645 N-Channel Ga As MESFET 2SK1645 For C to X-band Local Oscillator and Amplifier Preliminary Features • • • Package.
OKI electronic componets
KGL4216 - 10-Gbps T-Flip Flop IC 0.2m Gate Length GaAs MESFET Technology
DATA SHEET O K I G a A s P R O D U C T S KGL4216 10-Gbps T-Flip Flop IC 0.2µm Gate Length GaAs MESFET Technology February 2000 s s –––––––––––––––––.
NEC
NE6500379 - 3W L / S-BAND POWER GaAs MESFET
DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle powe.