NE6500379 Datasheet, mesfet equivalent, NEC

NE6500379 Features

• Mesfet
• High Output Power
• High Linear Gain : Po (1dB) = +35 dBm typ. : 10 dB typ.
• High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.9 GHz O

PDF File Details

Part number:

NE6500379

Manufacturer:

NEC

File Size:

88.53kb

Download:

📄 Datasheet

Description:

3w l / s-band power gaas mesfet. The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base stati

NE6500379 Application

• Applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gai

TAGS

NE6500379

NEC

📁 Related Datasheet

NE6500379A - 3W L / S-BAND POWER GaAs MESFET (NEC)
DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle powe.

NE6500496 - 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET (NEC)
PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500496 is power GaAs FET which.

NE6500496 - L&S BAND MEDIUM POWER GaAs MESFET (California Eastern)
L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS (TC= 25 °C unless otherwise noted) SYMBOLS VDSX VGDX VGSX IDS IGS PT TCH TSTG PAR.

NE650 - Dolby B-Type Noise Reduction Circuit (Philips)
NE650 Dolby B-Type Noise Reduction Circuit Product Specification DESCRIPTION The NE650 is a monolithic audio noise reduction circuit designed for use.

NE650103M - NECS 10 W L & S-BAND POWER GaAs MESFET (ETC)
NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES • LOW COST PLASTIC PACKAGE • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA • H.

NE6501077 - 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET (NEC)
PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6501077 is power GaAs FET whic.

NE650R279A - 0.2 W L / S-BAND POWER GaAs MES FET (NEC)
PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R279A 0.2 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R279A is a 0.2 W GaAs MES FET desi.

NE650R479A - 0.4 W L / S-BAND POWER GaAs MES FET (NEC)
PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET desi.

NE6510179 - 1 W L-BAND POWER GaAs HJ-FET (NEC)
DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power .

NE6510179A - MEDIUM POWER GaAs HJ-FET (CEL)
FunctionalONTINUED Characteristics NEC's 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE6510179A FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE Availab.