NE6510179 Datasheet (NEC) - 1 W L-BAND POWER GaAs HJ-FET

NE6510179, 1 W L-BAND POWER GaAs HJ-FET

The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems.

It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excellent distortion.

Reliability and performance uniformity ar

NE6510179 Features

* : Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm

* High linear gain : GL = 15 dB TYP. @VDS = 3.5 V