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NE6510179

1 W L-BAND POWER GaAs HJ-FET

NE6510179 Features

* : Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm

* High linear gain : GL = 15 dB TYP. @VDS = 3.5 V

NE6510179 General Description

The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity ar.

NE6510179 Datasheet (77.80 KB)

Preview of NE6510179 PDF

Datasheet Details

Part number:

NE6510179

Manufacturer:

NEC

File Size:

77.80 KB

Description:

1 w l-band power gaas hj-fet.

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TAGS

NE6510179 L-BAND POWER GaAs HJ-FET NEC

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