NE6510379A Datasheet (NEC) - 3 W L-BAND POWER GaAs HJ-FET

NE6510379A, 3 W L-BAND POWER GaAs HJ-FET

The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems.

It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion.

Reliability and performance uniformi

NE6510379A Features

* GaAs HJ-FET Structure

* High Output Power

* High Linear Gain : PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty : GL = 13 dB typ. @VDS = 3.5 V, IDset =