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NE6510379A - 3 W L-BAND POWER GaAs HJ-FET

NE6510379A Description

PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET .
The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems.

NE6510379A Features

* GaAs HJ-FET Structure
* High Output Power
* High Linear Gain : PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty : GL = 13 dB typ. @VDS = 3.5 V, IDset =

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Datasheet Details

Part number
NE6510379A
Manufacturer
NEC
File Size
97.47 KB
Datasheet
NE6510379A_NEC.pdf
Description
3 W L-BAND POWER GaAs HJ-FET

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📌 All Tags

L-BAND POWER GaAs HJ-FET NEC
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