NE6510179A Datasheet, Hj-fet, CEL

NE6510179A Features

  • Hj-fet
  • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel
  • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS
  • HIGH OUTPUT POWER

PDF File Details

Part number:

NE6510179A

Manufacturer:

CEL

File Size:

683.57kb

Download:

📄 Datasheet

Description:

Medium power gaas hj-fet. NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, an

Datasheet Preview: NE6510179A 📥 Download PDF (683.57kb)
Page 2 of NE6510179A Page 3 of NE6510179A

NE6510179A Application

  • Applications It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V with high linear gain, hig

TAGS

NE6510179A
MEDIUM
POWER
GaAs
HJ-FET
CEL

📁 Related Datasheet

NE6510179 - 1 W L-BAND POWER GaAs HJ-FET (NEC)
DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power .

NE6510179A - 1 W L-BAND POWER GaAs HJ-FET (NEC)
DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power .

NE6510379A - 3 W L-BAND POWER GaAs HJ-FET (NEC)
PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for m.

NE651R479A - 0.4 W L-BAND POWER GaAs HJ-FET (NEC)
DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle po.

NE650 - Dolby B-Type Noise Reduction Circuit (Philips)
NE650 Dolby B-Type Noise Reduction Circuit Product Specification DESCRIPTION The NE650 is a monolithic audio noise reduction circuit designed for use.

NE6500379 - 3W L / S-BAND POWER GaAs MESFET (NEC)
DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle powe.

NE6500379A - 3W L / S-BAND POWER GaAs MESFET (NEC)
DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle powe.

NE6500496 - 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET (NEC)
PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500496 is power GaAs FET which.

NE6500496 - L&S BAND MEDIUM POWER GaAs MESFET (California Eastern)
L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS (TC= 25 °C unless otherwise noted) SYMBOLS VDSX VGDX VGSX IDS IGS PT TCH TSTG PAR.

NE650103M - NECS 10 W L & S-BAND POWER GaAs MESFET (ETC)
NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES • LOW COST PLASTIC PACKAGE • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA • H.

Stock and price

California Eastern Laboratories (CEL)
RF MOSFET GAAS HJ-FET 3.5V 79A
DigiKey
NE6510179A-T1-A
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts