* Ideal for 460 MHz to 2.4 GHz medium output power amplification
* PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
* High collector efficiency: ηC = 60%
* UHS0-HV technology (fT = 25 GHz) adopted
* High reliability through use of gold electr
NE664M04-A Datasheet (2.07 MB)
NE664M04-A
CEL
2.07 MB
Npn silicon rf transistor.
PHASE-OUT
DATA SHEET
NPN SILICON RF TRANSISTOR
NE664M04
/
2SC5754
JEITA Part No.
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATIO.
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