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NE662M16-T3

NPN SILICON HIGH FREQUENCY TRANSISTOR

NE662M16-T3 Features

* HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE:

* Flat Lead Style with a height of just 0.50mm NE662M16 DESCRIPTION The NE662M16 is fabricated using NEC

NE662M16-T3 General Description

The NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M16" pack.

NE662M16-T3 Datasheet (63.42 KB)

Preview of NE662M16-T3 PDF

Datasheet Details

Part number:

NE662M16-T3

Manufacturer:

NEC

File Size:

63.42 KB

Description:

Npn silicon high frequency transistor.

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TAGS

NE662M16-T3 NPN SILICON HIGH FREQUENCY TRANSISTOR NEC

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