NE661M04-T2 NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

NEC

Description

DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUP.

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Datasheet Specifications

Part number: NE661M04-T2
Manufacturer: NEC
File Size: 70.64 KB
Datasheet: NE661M04-T2_NEC.pdf
Description: NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

Features

* Low noise and high gain with low collector current
* NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA
* Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
* fT = 25 GHz technology
* Flat-lead 4-pin thin super mini-mold

NE661M04-T2 Distributors

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NE661M04-T2 NPN SILICON TRANSISTOR FOR LOW CURRENT LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NEC

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