* Low noise and high gain with low collector current
* NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA
* Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
* fT = 25 GHz technology
* Flat-lead 4-pin thin super mini-mold
NE661M04-T2 Datasheet (70.64 KB)
NE661M04-T2
NEC
70.64 KB
Npn silicon rf transistor for low current / low noise / high-gain amplification flat-lead 4-pin thin super mini-mold.
DATA SHEET
NPN SILICON RF TRANSISTOR
NE661M04
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUP.
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