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NE662M16-T3-A, NE662M16 Datasheet - CEL

NE662M16-T3-A NPN SILICON RF TRANSISTOR

NE662M16-T3-A Features

* Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

* High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz

* 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-

NE662M16-CEL.pdf

This datasheet PDF includes multiple part numbers: NE662M16-T3-A, NE662M16. Please refer to the document for exact specifications by model.
NE662M16-T3-A Datasheet Preview Page 2 NE662M16-T3-A Datasheet Preview Page 3

Datasheet Details

Part number:

NE662M16-T3-A, NE662M16

Manufacturer:

CEL

File Size:

700.05 KB

Description:

Npn silicon rf transistor.

Note:

This datasheet PDF includes multiple part numbers: NE662M16-T3-A, NE662M16.
Please refer to the document for exact specifications by model.

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TAGS

NE662M16-T3-A NE662M16 NPN SILICON TRANSISTOR CEL

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