NE662M16-T3-A Datasheet - CEL

NE662M16-T3-A NPN SILICON RF TRANSISTOR

NE662M16-T3-A Features

* Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

* High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz

* 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-

Datasheet Details

NE662M16-T3-A

CEL

700.05 KB

Npn silicon rf transistor.

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NE662M16-T3-A NPN SILICON TRANSISTOR CEL

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