NE662M16-T3-A, NE662M16 NPN SILICON RF TRANSISTOR

CEL

Description

DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD .

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NE662M16-T3-A Datasheet Preview — This datasheet PDF includes multiple part numbers: NE662M16-T3-A, NE662M16. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: NE662M16-T3-A, NE662M16
Manufacturer: CEL
File Size: 700.05 KB
Datasheet: NE662M16-CEL.pdf
Description: NPN SILICON RF TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: NE662M16-T3-A, NE662M16.
Please refer to the document for exact specifications by model.

Features

* Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
* High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz
* 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-

NE662M16-T3-A Distributors

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NE662M16 NPN SILICON TRANSISTOR CEL

CEL NE662M16-T3-A-like datasheet