NE662M16-T3-A Datasheet, Transistor, CEL

NE662M16-T3-A Features

• Transistor
• Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• High fT: fT = 25.0 GHz TYP. @ VCE =

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Part number:

NE662M16-T3-A

Manufacturer:

CEL

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700.05kb

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📄 Datasheet

Description:

Npn silicon rf transistor.

TAGS

NE662M16-T3-A

CEL

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