NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

Description

www.DataSheet4U.com NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR .
NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process.

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Datasheet Specifications

Part number: NE662M04
Manufacturer: CEL
File Size: 409.25 KB
Datasheet: NE662M04_CEL.pdf
Description: NPN SILICON HIGH FREQUENCY TRANSISTOR

Features

* HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M04 PACKAGE:
* SOT-343 footprint, with a height of just 0.59 mm
* Flat Lead Style for better RF performance M04

Applications

* from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE662M04 is an ideal choice for LNA and oscillator requirements in all mobile communication system

NE662M04 Distributors

📁 Related Datasheet

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NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR CEL

CEL NE662M04-like datasheet