NE662M04 Datasheet (CEL) - NPN SILICON HIGH FREQUENCY TRANSISTOR

NE662M04, NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process.

With a typical transition frequency of 25 GHz the NE662M04 is usable in applications from 100 MHz to 10 GHz.

The NE662M04 provides excellent low voltage/low current performance.

NEC's new low profile/flat lead style "M04" package

NE662M04 Features

* HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M04 PACKAGE:

* SOT-343 footprint, with a height of just 0.59 mm

* Flat Lead Style for better RF performance M04