NE662M04 Datasheet, Transistor, CEL

NE662M04 Features

  • Transistor
  • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M04 PACKAGE:

PDF File Details

Part number:

NE662M04

Manufacturer:

CEL

File Size:

409.25kb

Download:

📄 Datasheet

Description:

Npn silicon high frequency transistor. NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M04 is

Datasheet Preview: NE662M04 📥 Download PDF (409.25kb)
Page 2 of NE662M04 Page 3 of NE662M04

NE662M04 Application

  • Applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M04

TAGS

NE662M04
NPN
SILICON
HIGH
FREQUENCY
TRANSISTOR
CEL

📁 Related Datasheet

NE662M16 - NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAI.

NE662M16 - NPN SILICON RF TRANSISTOR (CEL)
DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD .

NE662M16-A - NPN SILICON RF TRANSISTOR (CEL)
DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD .

NE662M16-T3 - NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAI.

NE662M16-T3-A - NPN SILICON RF TRANSISTOR (CEL)
DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD .

NE66219 - NPN SILICON RF TRANSISTOR (California Eastern Labs)
NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PK.

NE661M04 - NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD (NEC)
DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUP.

NE661M04-T2 - NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD (NEC)
DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUP.

NE663M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR (California Eastern Labs)
.. NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP .

NE664M04 - NPN SILICON RF TRANSISTOR (California Eastern Labs)
PHASE-OUT DATA SHEET NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATIO.

Stock and price

part
California Eastern Laboratories (CEL)
EVAL BOARD FOR NE662M04 900MHZ
DigiKey
NE662M04-EVIP09
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts