NE662M04 Datasheet - CEL

NPN SILICON HIGH FREQUENCY TRANSISTOR

NE662M04 Features

* HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M04 PACKAGE:

* SOT-343 footprint, with a height of just 0.59 mm

* Flat Lead Style for better RF performance M04

NE662M04 General Description

NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M04" package.

NE662M04 Datasheet (409.25 KB)

NE662M04 Datasheet Preview — Preview of NE662M04 PDF

Datasheet Details

Part number:

NE662M04

Manufacturer:

CEL

File Size:

409.25 KB

Description:

Npn silicon high frequency transistor.

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NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR CEL

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NE662M04 Features

NE662M04 General Description

Datasheet Details

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NE662M04 Distributor