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NE662M16-A

NPN SILICON RF TRANSISTOR

NE662M16-A Features

* Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

* High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz

* 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-

NE662M16-A Datasheet (700.05 KB)

Preview of NE662M16-A PDF

Datasheet Details

Part number:

NE662M16-A

Manufacturer:

CEL

File Size:

700.05 KB

Description:

Npn silicon rf transistor.
DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD .

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NE662M16-A NPN SILICON TRANSISTOR CEL

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