NE662M16-A Features
* Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
* High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz
* 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-
Datasheet Details
NE662M16-A, NE662M16
CEL
700.05 KB
Npn silicon rf transistor.
This datasheet PDF includes multiple part numbers: NE662M16-A, NE662M16.
Please refer to the document for exact specifications by model.
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NE662M16-A Distributor
