NE661M04 Datasheet, Mini-mold, NEC

NE661M04 Features

• Mini-mold
• Low noise and high gain with low collector current
• NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA
• Maximum stable power gain: MSG = 22 dB TYP

PDF File Details

Part number:

NE661M04

Manufacturer:

NEC

File Size:

70.64kb

Download:

📄 Datasheet

Description:

Npn silicon rf transistor for low current / low noise / high-gain amplification flat-lead 4-pin thin super mini-mold.

TAGS

📁 Related Datasheet

NE661M04-T2 - NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD (NEC)
DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUP.

NE66219 - NPN SILICON RF TRANSISTOR (California Eastern Labs)
NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PK.

NE662M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR (CEL)
.. NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW N.

NE662M16 - NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAI.

NE662M16 - NPN SILICON RF TRANSISTOR (CEL)
DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD .

NE662M16-A - NPN SILICON RF TRANSISTOR (CEL)
DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD .

NE662M16-T3 - NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAI.

NE662M16-T3-A - NPN SILICON RF TRANSISTOR (CEL)
DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD .

NE663M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR (California Eastern Labs)
.. NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP .

NE664M04 - NPN SILICON RF TRANSISTOR (California Eastern Labs)
PHASE-OUT DATA SHEET NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATIO.