NE661M04 Datasheet - NEC

NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

NE661M04 Features

* Low noise and high gain with low collector current

* NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA

* Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA

* fT = 25 GHz technology

* Flat-lead 4-pin thin super mini-mold

Datasheet Details

NE661M04

NEC

70.64 KB

Npn silicon rf transistor for low current / low noise / high-gain amplification flat-lead 4-pin thin super mini-mold.

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