NE663M04 Datasheet (California Eastern Labs) - NPN SILICON HIGH FREQUENCY TRANSISTOR

NE663M04, NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process.

With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz.

The NE663M04 provides excellent low voltage/low current performance.

NEC's low profile/flat lead style "M04" package is i

NE663M04 Features

* HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH IP3: NF = 27 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a