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NE663M04 Datasheet - California Eastern Labs

NE663M04 NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz. The NE663M04 provides excellent low voltage/low current performance. NEC's low profile/flat lead style "M04" package is i.

NE663M04 Features

* HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH IP3: NF = 27 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a

NE663M04_CaliforniaEasternLabs.pdf

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Datasheet Details

Part number:

NE663M04

Manufacturer:

California Eastern Labs

File Size:

407.63 KB

Description:

Npn silicon high frequency transistor.

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NE663M04 NE663M04 NPN SILICON HIGH FREQUENCY TRANSISTOR California Eastern Labs

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