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NE66719 Datasheet - California Eastern Labs

NE66719 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

0.5 +0.1 -0 UB PIN CONNECTIONS 1. Emitter 2. Base DataSheet4U.com3. Collector DataShee ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = .

NE66719 Features

* HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz 2 NE66719 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 19 1.6±0.1 0.8±0.1 1.6±0.1 1.0 0.2 NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT wafer

NE66719_CaliforniaEasternLabs.pdf

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Datasheet Details

Part number:

NE66719

Manufacturer:

California Eastern Labs

File Size:

303.92 KB

Description:

Necs npn silicon high frequency transistor.

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NE66719 NE66719 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR California Eastern Labs

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