NE66719 Datasheet (California Eastern Labs) - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NE66719, NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

0.5 +0.1 -0 UB PIN CONNECTIONS 1.

Emitter 2.

Base DataSheet4U.com3.

Collector DataShee ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB =

NE66719 Features

* HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz 2 NE66719 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 19 1.6±0.1 0.8±0.1 1.6±0.1 1.0 0.2 NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT wafer