NE66719 Datasheet, Transistor, California Eastern Labs

NE66719 Features

• Transistor
• HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz 2 NE66719 OUTLINE DIMENSIONS (Units in mm)

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Part number:

NE66719

Manufacturer:

California Eastern Labs

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303.92kb

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📄 Datasheet

Description:

Necs npn silicon high frequency transistor. 0.5 +0.1 -0 UB PIN CONNECTIONS 1. Emitter 2. Base DataSheet4U.com3. Collector DataShee ELECTRICAL CHARACTERISTICS (TA = 25°C) P

NE66719 Application

• Applications at 2 GHz and above. 0.5 3 1 0.75±0.05 0.6 0 to 0.1 0.15 -0.05 +0.1 0.3 -0 +0.1 DESCRIPTION 0.5 +0.1 -0 UB PIN CONNECTION

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NE66719

California Eastern Labs

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