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AMPLIFICATION Datasheet, Features, Application

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ETC

D13007K - Low-frequency amplification shell rated bipolar transistors

www.DataSheet4U.com R 3DD13007K µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D13007K ²úÆ·ÌØÐÔ ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ Ö÷ÒªÓÃ; ¸ßƵ¿ª¹ØçÔ´ ½ÚÄܵÆç×ÓÕòÁ÷ ¸ßÆ.
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ETC

D5032 - Low-frequency amplification shell rated bipolar transistors

www.DataSheet4U.com R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D5032 ²úÆ·ÌØÐÔ ¡ô ¡ô ¡ô ¡ô ¡ô ¸ßÄÍѹ ±¥ºÍѹ½µ ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ »·±£¨ :VCBO=1500V :VCE(sat)=3V(max.).
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Silvan Chip

LP8029-M4 - built-in decoder RF amplification

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ETC

13001S - Low-frequency amplification environment rated bipolar transistors

R µÍÆ·Å´ó»¾³¶î¨ÄË«¼Ð§Ìå¹Ü D13001S ²úÆ·ÌØÐÔ ¡ô ¡ô www.DataSheet4U.com ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¡ô ¡ô ¡ô ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ »·±£¨ RoHS£©²úÆ· Ö÷ÒªÓÃ; ¡ô ¡ô .
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JILIN SINO-MICROELECTRONICS

D13005K - Low-frequency amplification shell rated bipolar transistors

R 3DD13005K µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D13005K ÔÐØÌ·Æú² ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ Ö÷ÒªÓÃ; ½ÚÄÜµÆ µç×ÓÕòÁ÷Æ ¸ßƵ¿ª¹ØçÔ´ ¸ßƵ¹¦ÂÊ±ä» Ò»°ã¹¦ÂÊ·.
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Silvan Chip

LP8029-L4 - built-in decoder RF amplification

Silvan Chip Electronics Tech. Co., Ltd. LP8029-L4RF LP8029-L4 8 LP8029RF , LP801B 。 3 。 RF ,,,, 。、、。 LP8029-L4 RF LP8029-L4 1-6 A0-A5 。LP8029 b.
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Sanken

C6145A - Audio Amplification Transistor

2SC6145A Audio Amplification Transistor Features and Benefits ▪ LAPT (High frequency multi emitter transistor) ▪ Small package (TO-3P) ▪ High power h.
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Silvan Chip

CIR2272AN-M4 - Built-in RF amplification

Shen Zhen Silvan Chip Electronics Tech. Co., Ltd. CIR2272AN-M4RF CIR2272AN-M4 CIR2272AN-M4RF ,SC2260,SC2262 。6562。 RF ,,, , 。、、 。 CIR2272AN-M4 RF .
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ETC

D13005A - Low-frequency amplification shell rated bipolar transistors

www.DataSheet4U.com R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D13005A ²úÆ·ÌØÐÔ ¡ô ¡ô ¡ô ¡ô ¡ô ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ »·±£¨ RoHS£©²úÆ· Ö÷ÒªÓÃ; ¡ô ¡ô .
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Sanyo Semiconductor

STK392-150-E - Current Amplification

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
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Chenbing

CSC8005 - AB/D Class switching audio power amplification device

CSC8005 AB/D CSC8005 FM ,5.5W(2Ω ),AB/D 。5V , 5.5W(2Ω,BTL , THD<10%), 1% (20Hz—20KHz)。CSC8005 , 。CSC8005 。CSC8005 ESOP8 ,、 。CSC8005 ,。CSC8005.
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Chiprui

CIR2272AN - Built-in RF amplification fixed code decoder

ÄÚÖà RF ·Å´ó¹Ì¶¨Âë½âÆ÷ ¸ÅÊö CIR2272AN ÊÇÒ»¿îÄÚÖà ËüºÍ ¼¯³Éµç·£¬ ºÏ ½µÍÁË ´Ó¶øó·ùÈļò»¯²úÆç¡£ ¹¦Ü ÓЧµÄÅ»¯Á˲úÆ·ç ¼õÉÙ¹¤ò¡£ ú²³±¾ ·µÄÉè¼Æ¡£ Ò£¿Ø±¨.
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JILIN SINO

D4515 - Low-frequency amplification shell rated bipolar transistors

R D 2004.01 1/5 2004.01 2/5 (mA) Ic (A) 10 500mA 450mA 400mA 350mA 300mA 250mA 200mA 5 150mA 100mA 50mA 2 01 - 34 VCE (V) 5 2004.01 3/.
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ETC

3DD2499 - Low-frequency amplification case - rated bipolar transistors

www.DataSheet4U.com »ª¾§·ÖÁ¢Æ÷¼þ 3DD2499 µÍÆ ·Å´ó¹Ü¿Ç¶î ¨Ë«¼ Ð;§Ìå¹Ü 1 ãµØÌëÓöÊŸ 3DD2499 ¹è ¹ ÂÏçÈãµØÌäÆ ß¸¹Ñ絩´÷» ì¿È¶ÙËعª¿ ͵ ½¹Ñͺ¥± úÔÐØÌ÷.
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ETC

D3402 - Low-frequency amplification shell rated bipolar transistors

R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D3402 ²úÆ·ÌØÐÔ ¡ô ¡ô www.DataSheet4U.com ¸ßÄÍѹ ±¥ºÍѹ½µ ¡ô ¡ô ¡ô ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ »·±£¨ :VCBO=1700V :VCE(sat)=5V(max..
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XINSUN

W2XN934 - Low-frequency amplification shell rated bipolar transistors

W2XN934 XS-J-003 13-A1-03 1/3 1 1.1 W2XN934 。 1.2 z 、 z z 2 (mm×mm) (µm) *(µm) (µm2) (µm) (㎜) () () * : 1.
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XINSUN

W2XN9155 - Low-frequency amplification shell rated bipolar transistors

W2XN9155 XS-J-038 13-A2-03 1/3 1 1.1 W2XN9155 。 1.2 z 、 z z 2 (mm×mm) (µm) *(µm) (µm2) (µm) (㎜) () () 1..
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Huajing Microelectronics

3DD5017 - Low-frequency amplification shell rated bipolar transistors

3DD5017 1. 3DD5017 NPN ,, 。: ● 、 ● ● ● ● :TO-3P(H)IS 2. 15.5max 5.5max 3max Φ3.6 26.5max 4.5 2.1 ,Tamb= 25℃ - VCE0 650.
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WEIFANG HUICHUAN

EB13009 - Case rated low frequency amplification bipolar transistor

WEIFANG HUICHUAN ELECTRONIC CO.,LTD. EB13009 13009 1、 13009 NPN ,、,。: 。。 。 。 ,。 :TO-220 2、 2.1 ,Ta=25℃ 400 700 9 12 2 150 -55-150 V V .
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XINSUN

W2XN9386 - Low-frequency amplification case - rated bipolar transistors

W2XN9386 XS-J-055 13-A2-03 1/3 1 1.1 W2XN9386 、、 。 1.2 z z , z 2 (mm×mm) 3.86×3.86 (µm) *(µm) 250±20 74 572×1064 (µ.
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