NESG2046M33 Datasheet, Amplification, NEC

NESG2046M33 Features

• Amplification
• IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz HIGH BREAKDOWN VOLTAGE TECHNOLOGY

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Part number:

NESG2046M33

Manufacturer:

NEC

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118.31kb

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📄 Datasheet

Description:

Necs npn sige transistor for low noise / high -gain amplification.

NESG2046M33 Application

• Applications NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS : VCEO (

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