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NESG2021M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR

NESG2021M05 Description

www.DataSheet4U.com DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR .
NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications includi.

NESG2021M05 Features

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better

NESG2021M05 Applications

* including low noise amplifiers, medium power amplifiers, and oscillators. NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs. NESG2021M05 M05 UNITS dB dB dB dB dB dB dBm dBm GHz pF nA nA 130 190 20 15.0 20.0 17.0 MIN TYP 1.3 10.0 0.9 18.0 22.5

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Datasheet Details

Part number
NESG2021M05
Manufacturer
CEL
File Size
755.40 KB
Datasheet
NESG2021M05_CEL.pdf
Description
NPN SiGe HIGH FREQUENCY TRANSISTOR

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NPN SiGe HIGH FREQUENCY TRANSISTOR CEL
CEL NESG2021M05-like datasheet