NESG2021M05 Datasheet, transistor equivalent, CEL

NESG2021M05 Features

• Transistor
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22

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Part number:

NESG2021M05

Manufacturer:

CEL

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755.40kb

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📄 Datasheet

Description:

Npn sige high frequency transistor. NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of app

NESG2021M05 Application

• Applications including low noise amplifiers, medium power amplifiers, and oscillators. NECʼs low profile, flat lead style M05 Package provides high freq

TAGS

NESG2021M05

CEL

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