Datasheet4U Logo Datasheet4U.com

NESG2101M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NESG2101M05 Description

NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR .
NEC's NESG2101M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications includi.

NESG2101M05 Features

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, wi

NESG2101M05 Applications

* including low noise amplifiers, medium power amplifiers, and oscillators NEC s low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga RF NF Ga MSG |S21E| fT Cre I

📥 Download Datasheet

Preview of NESG2101M05 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NESG2101M05
Manufacturer
NEC
File Size
172.23 KB
Datasheet
NESG2101M05_NEC.pdf
Description
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

📁 Related Datasheet

  • NESG2101M16 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
  • NESG2107M33 - NECs NPN SILICON TRANSISTOR (California Eastern Labs)
  • NESG2021M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
  • NESG2021M16 - HIGH FREQUENCY TRANSISTOR (CEL)
  • NESG2031M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
  • NESG2031M16 - HIGH FREQUENCY TRANSISTOR (CEL)
  • NESG204619 - NPN SiGe TRANSISTOR (CEL)
  • NESG250134 - NECs NPN SiGe RF TRANSISTOR (California Eastern Labs)

📌 All Tags

NEC NESG2101M05-like datasheet