NESG2101M05 Datasheet - NEC

NESG2101M05, NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR .
NEC's NESG2101M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications includi.

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Datasheet Details

Part number:

NESG2101M05

Manufacturer:

NEC

File Size:

172.23 KB

Description:

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

Features

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, wi

Applications

* including low noise ampliﬁers, medium power ampliﬁers, and oscillators NEC s low proﬁle, ﬂat lead style M05 Package provides high frequency performance for compact wireless designs. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga RF NF Ga MSG |S21E| fT Cre I

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NESG2101M05 NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR NEC

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