NESG2101M05 Datasheet (NEC) - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NESG2101M05, NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NEC's NESG2101M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators NEC s low proﬁle, ﬂat lead style M05 Package provides high frequency performance for c

NESG2101M05 Features

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, wi