NES1821B-30 Datasheet - NEC

NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the device uses PHS (Plated He.

NES1821B-30 Features

* DRAIN 0.1 2.4 0.2 MAX 4.5 MAX 1.8 High output power High gain High power added efficiency Internally matched input High reliability ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current T

NES1821B-30_NEC.pdf