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NES1823P-100

100W L-BAND PUSH-PULL POWER GaAs MESFET

NES1823P-100 Features

* Push-pull type N-channel GaAs MESFET

* High Output Power : 100 W TYP.

* High Linear Gain : 11.0 dB TYP.

* High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz ORDERING INFORMATION (PLAN) Part Number NES1823P-100 T-92 Package Supplying Form ESD pro

NES1823P-100 General Description

The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3.

NES1823P-100 Datasheet (154.63 KB)

Preview of NES1823P-100 PDF

Datasheet Details

Part number:

NES1823P-100

Manufacturer:

NEC

File Size:

154.63 KB

Description:

100w l-band push-pull power gaas mesfet.

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TAGS

NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET NEC

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