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NES1823P-100 - 100W L-BAND PUSH-PULL POWER GaAs MESFET

NES1823P-100 Description

PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET .
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems.

NES1823P-100 Features

* Push-pull type N-channel GaAs MESFET
* High Output Power : 100 W TYP.
* High Linear Gain : 11.0 dB TYP.
* High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz ORDERING INFORMATION (PLAN) Part Number NES1823P-100 T-92 Package Supplying Form ESD pro

NES1823P-100 Applications

* for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching. The device employs Tungsten Silicide gates, via holes, plated heat sink, an

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Datasheet Details

Part number
NES1823P-100
Manufacturer
NEC
File Size
154.63 KB
Datasheet
NES1823P-100_NEC.pdf
Description
100W L-BAND PUSH-PULL POWER GaAs MESFET

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100W L-BAND PUSH-PULL POWER GaAs MESFET NEC
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