NESG2030M04 Datasheet, Model, NEC

NESG2030M04 Features

• Model
• SiGe TECHNOLOGY: fT = 60 GHz Process LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz NEW LOW PROFILE M04 P

PDF File Details

Part number:

NESG2030M04

Manufacturer:

NEC

File Size:

178.88kb

Download:

📄 Datasheet

Description:

Nonlinear model. The NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NES

NESG2030M04 Application

• Applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 µA to 25 mA. The NE

TAGS

NESG2030M04

NEC

📁 Related Datasheet

NESG2030M04 - SiGe HIGH FREQUENCY TRANSISTOR (CEL)
.. NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • • • • SiGe TECHNOLOGY: fT = 60 GHz Process LOW .

NESG2031M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
.. NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Max.

NESG2031M16 - HIGH FREQUENCY TRANSISTOR (CEL)
.. NEC's NPN SiGe NESG2031M16 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Max.

NESG2021M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
.. DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (.

NESG2021M05 - NPN SiGe RF Transistor (Renesas)
NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05) Data Sheet R09DS0034EJ0300 R.

NESG2021M16 - HIGH FREQUENCY TRANSISTOR (CEL)
PRELIMINARY DATA SHEET NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2021M16 FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute .

NESG204619 - NPN SiGe TRANSISTOR (CEL)
.. PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG204619 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOIS.

NESG2046M33 - NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION (NEC)
PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • • IDEAL FOR LOW NOISE, HIGH-GAIN AMP.

NESG2101M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR (NEC)
NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTP.

NESG2101M16 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
.. PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOG.