Part number:
NESG210833
Manufacturer:
NEC
File Size:
121.28 KB
Description:
Npn sige rf transistor.
NESG210833 Features
* The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz
* PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz
* OIP3 = 31 dBm TYP. @ VCE
NESG210833 Datasheet (121.28 KB)
Datasheet Details
NESG210833
NEC
121.28 KB
Npn sige rf transistor.
📁 Related Datasheet
NESG2101M05 NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR (NEC)
NESG2101M16 NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG210719 NECs NPN SiGe TRANSISTOR (NEC)
NESG2107M33 NECs NPN SILICON TRANSISTOR (California Eastern Labs)
NESG2021M05 NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG2021M05 NPN SiGe RF Transistor (Renesas)
NESG2021M16 HIGH FREQUENCY TRANSISTOR (CEL)
NESG2030M04 NONLINEAR MODEL (NEC)
TAGS
NESG210833 Distributor