NESG210833 Datasheet - NEC

NESG210833, NPN SiGe RF TRANSISTOR

DATA SHEET www.DataSheet4U.com NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFI.

datasheet Preview Page 1 from Datasheet4u.com

NESG210833_NEC.pdf

NESG210833 Datasheet Preview — Preview of NESG210833 PDF

Datasheet Details

Part number:

NESG210833

Manufacturer:

NEC

File Size:

121.28 KB

Description:

NPN SiGe RF TRANSISTOR

Features

* The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz
* PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz
* OIP3 = 31 dBm TYP. @ VCE

NESG210833 Distributors

📁 Related Datasheet

NESG2101M16 NESG2107M33 NESG2021M05 NESG2021M16 NESG2031M05 NESG2031M16

📌 All Tags

NESG210833 NPN SiGe TRANSISTOR NEC

NEC NESG210833-like datasheet