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NESG210833 - NPN SiGe RF TRANSISTOR

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NEC

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NESG210833 NPN SiGe RF TRANSISTOR by NEC - Datasheet Preview — Datasheet preview – NESG210833

Datasheet Details

Part number	NESG210833
Manufacturer	NEC
File Size	121.28 KB
Description	NPN SiGe RF TRANSISTOR
Datasheet	NESG210833 Datasheet
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Features

The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz.
PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz.
OIP3 = 31 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz.
Maximum stable power gain: MSG =16.0 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz.
SiGe HBT technology (UHS2) : fT = 15.5 GHz.
3-pin minimo.

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Published: Mar 27, 2010 |