NESG2031M05 Datasheet, Transistor, CEL

NESG2031M05 Features

• Transistor
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG =

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Part number:

NESG2031M05

Manufacturer:

CEL

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183.30kb

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📄 Datasheet

Description:

Npn sige high frequency transistor. NEC's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of app

NESG2031M05 Application

• Applications including low noise amplifiers, medium power amplifiers, and oscillators. NEC s low profile, flat lead style M05 Package provides high freq

TAGS

NESG2031M05

CEL

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