NESG2031M05 Datasheet - CEL

NESG2031M05 NPN SiGe HIGH FREQUENCY TRANSISTOR

NEC's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators. NEC s low proﬁle, ﬂat lead style M05 Package provides high frequency performance for .

NESG2031M05 Features

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for bett

NESG2031M05_CEL.pdf