Datasheet Details
- Part number
- NESG2031M05
- Manufacturer
- CEL
- File Size
- 183.30 KB
- Datasheet
- NESG2031M05_CEL.pdf
- Description
- NPN SiGe HIGH FREQUENCY TRANSISTOR
NESG2031M05 Description
www.DataSheet4U.com NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR .
NEC's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications includi.
NESG2031M05 Features
* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for bett
NESG2031M05 Applications
* including low noise amplifiers, medium power amplifiers, and oscillators. NEC s low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs. ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS NF Ga NF Ga RF MSG |S21E| P1dB OIP3 fT Cr
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