NESG210719
NEC
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Necs npn sige transistor.
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NESG2107M33 - NECs NPN SILICON TRANSISTOR
(California Eastern Labs)
PRELIMINARY DATA SHEET
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NEC's NPN SILICON TRANSISTOR NESG2107M33
FEATURES
• • •
IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICAT.
NESG2101M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
(NEC)
NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR
FEATURES
• • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTP.
NESG2101M16 - NPN SiGe HIGH FREQUENCY TRANSISTOR
(CEL)
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PRELIMINARY DATA SHEET
NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR
FEATURES
• • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOG.
NESG210833 - NPN SiGe RF TRANSISTOR
(NEC)
DATA SHEET
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NPN SILICON GERMANIUM RF TRANSISTOR
NESG210833
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFI.
NESG2021M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR
(CEL)
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DATA SHEET
NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR
FEATURES
• • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (.
NESG2021M05 - NPN SiGe RF Transistor
(Renesas)
NESG2021M05
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
Data Sheet
R09DS0034EJ0300 R.
NESG2021M16 - HIGH FREQUENCY TRANSISTOR
(CEL)
PRELIMINARY DATA SHEET
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NESG2021M16
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute .
NESG2030M04 - NONLINEAR MODEL
(NEC)
..
NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04
FEATURES
• • • • SiGe TECHNOLOGY: fT = 60 GHz Process LOW NOISE FIGURE: NF = 0.9 .
NESG2030M04 - SiGe HIGH FREQUENCY TRANSISTOR
(CEL)
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NPN SiGe RF TRANSISTOR
NESG2030M04
NPN SiGe HIGH FREQUENCY TRANSISTOR
FEATURES
• • • • SiGe TECHNOLOGY: fT = 60 GHz Process LOW .
NESG2031M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR
(CEL)
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NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR
FEATURES
• • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Max.