NESG2101M16 Datasheet, Transistor, CEL

NESG2101M16 Features

• Transistor
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF =

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Part number:

NESG2101M16

Manufacturer:

CEL

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📄 Datasheet

Description:

Npn sige high frequency transistor. NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of app

NESG2101M16 Application

• Applications including low noise amplifiers, medium power amplifiers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTL

TAGS

NESG2101M16

CEL

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