| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
NEC Electronics Group | NESG2101M16-T3-A | Bristol Electronics | 7592 | 0 |
$0
|
Download Datasheet (253.61 KB)
NESG2101M16
CEL
253.61 KB
Npn sige high frequency transistor.
www.DataSheet4U.com
PRELIMINARY DATA SHEET
NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR
FE.
NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is.
📁 Related Datasheet
NESG2101M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
(NEC)
NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR
FEATURES
• • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTP.
NESG210719 - NECs NPN SiGe TRANSISTOR
(NEC)
PRELIMINARY DATA SHEET
..
NEC's NPN SiGe TRANSISTOR NESG210719 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
FEATURES
• IDEAL FOR OSC., HIG.
NESG2107M33 - NECs NPN SILICON TRANSISTOR
(California Eastern Labs)
PRELIMINARY DATA SHEET
..
NEC's NPN SILICON TRANSISTOR NESG2107M33
FEATURES
• • •
IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICAT.
NESG210833 - NPN SiGe RF TRANSISTOR
(NEC)
DATA SHEET
..
NPN SILICON GERMANIUM RF TRANSISTOR
NESG210833
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFI.
NESG2021M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR
(CEL)
..
DATA SHEET
NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR
FEATURES
• • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (.
NESG2021M05 - NPN SiGe RF Transistor
(Renesas)
NESG2021M05
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
Data Sheet
R09DS0034EJ0300 R.
 |
|
NEC Electronics Group
|
| NESG2101M16 |
| Quest Components |
| 360 In Stock |
| Qty : 287 units |
|
Unit Price : $0.56
|
| 🛒 Buy Now |
