NESG2101M16 Datasheet - CEL

NESG2101M16 NPN SiGe HIGH FREQUENCY TRANSISTOR

NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF.

NESG2101M16 Features

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minim

NESG2101M16_CEL.pdf