Part number:
NESG2101M16
Manufacturer:
CEL
File Size:
253.61 KB
Description:
Npn sige high frequency transistor.
Datasheet Details
Part number:
NESG2101M16
Manufacturer:
CEL
File Size:
253.61 KB
Description:
Npn sige high frequency transistor.
NESG2101M16, NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF
NESG2101M16 Features
* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minim
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