NESG260234 Datasheet, Transistor, CEL

NESG260234 Features

  • Transistor
  • THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (1 W) AMPLIFICATION PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz PO = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 90

PDF File Details

Part number:

NESG260234

Manufacturer:

CEL

File Size:

911.78kb

Download:

📄 Datasheet

Description:

Npn sige rf transistor.

Datasheet Preview: NESG260234 📥 Download PDF (911.78kb)
Page 2 of NESG260234 Page 3 of NESG260234

NESG260234 Application

  • Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can

TAGS

NESG260234
NPN
SiGe
TRANSISTOR
CEL

📁 Related Datasheet

NESG2021M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
.. DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (.

NESG2021M05 - NPN SiGe RF Transistor (Renesas)
NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05) Data Sheet R09DS0034EJ0300 R.

NESG2021M16 - HIGH FREQUENCY TRANSISTOR (CEL)
PRELIMINARY DATA SHEET NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2021M16 FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute .

NESG2030M04 - NONLINEAR MODEL (NEC)
.. NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • • • • SiGe TECHNOLOGY: fT = 60 GHz Process LOW NOISE FIGURE: NF = 0.9 .

NESG2030M04 - SiGe HIGH FREQUENCY TRANSISTOR (CEL)
.. NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • • • • SiGe TECHNOLOGY: fT = 60 GHz Process LOW .

NESG2031M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
.. NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Max.

NESG2031M16 - HIGH FREQUENCY TRANSISTOR (CEL)
.. NEC's NPN SiGe NESG2031M16 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Max.

NESG204619 - NPN SiGe TRANSISTOR (CEL)
.. PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG204619 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOIS.

NESG2046M33 - NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION (NEC)
PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • • IDEAL FOR LOW NOISE, HIGH-GAIN AMP.

NESG2101M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR (NEC)
NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTP.

Stock and price

California Eastern Laboratories (CEL)
RF TRANS NPN 9.2V 3-MINI
DigiKey
NESG260234-T1-AZ
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts