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NESG260234

NPN SiGe RF TRANSISTOR

NESG260234 Features

* THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (1 W) AMPLIFICATION PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz PO = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz MAXIMUM STABLE GAIN: MSG = 23 dB TYP @ VCE = 6 V, IC = 100 mA, f = 460 MHz SiGe TECHNOLOGY: UHS2-HV process A

NESG260234 Datasheet (911.78 KB)

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Datasheet Details

Part number:

NESG260234

Manufacturer:

CEL

File Size:

911.78 KB

Description:

Npn sige rf transistor.

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NESG260234 NPN SiGe TRANSISTOR CEL

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