NESG2021M16 Datasheet, Transistor, CEL

NESG2021M16 Features

• Transistor
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN

PDF File Details

Part number:

NESG2021M16

Manufacturer:

CEL

File Size:

79.55kb

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📄 Datasheet

Description:

High frequency transistor. NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of app

NESG2021M16 Application

• Applications including low noise amplifiers, medium power amplifiers, and oscillators. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUT

TAGS

NESG2021M16

CEL

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