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NESG2021M16 Datasheet - CEL

NESG2021M16 HIGH FREQUENCY TRANSISTOR

NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE NESG2021M16 M16 .

NESG2021M16-CEL.pdf

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Datasheet Details

Part number:

NESG2021M16

Manufacturer:

CEL

File Size:

79.55 KB

Description:

High frequency transistor.

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