NESG2107M33 Datasheet, Transistor, California Eastern Labs

NESG2107M33 Features

  • Transistor
  • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE

PDF File Details

Part number:

NESG2107M33

Manufacturer:

California Eastern Labs

File Size:

324.71kb

Download:

📄 Datasheet

Description:

Necs npn silicon transistor.

Datasheet Preview: NESG2107M33 📥 Download PDF (324.71kb)
Page 2 of NESG2107M33 Page 3 of NESG2107M33

NESG2107M33 Application

  • Applications HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER N

TAGS

NESG2107M33
NECs
NPN
SILICON
TRANSISTOR
California Eastern Labs

📁 Related Datasheet

NESG210719 - NECs NPN SiGe TRANSISTOR (NEC)
PRELIMINARY DATA SHEET .. NEC's NPN SiGe TRANSISTOR NESG210719 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIG.

NESG2101M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR (NEC)
NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTP.

NESG2101M16 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
.. PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOG.

NESG210833 - NPN SiGe RF TRANSISTOR (NEC)
DATA SHEET .. NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFI.

NESG2021M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
.. DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (.

NESG2021M05 - NPN SiGe RF Transistor (Renesas)
NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05) Data Sheet R09DS0034EJ0300 R.

NESG2021M16 - HIGH FREQUENCY TRANSISTOR (CEL)
PRELIMINARY DATA SHEET NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2021M16 FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute .

NESG2030M04 - NONLINEAR MODEL (NEC)
.. NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • • • • SiGe TECHNOLOGY: fT = 60 GHz Process LOW NOISE FIGURE: NF = 0.9 .

NESG2030M04 - SiGe HIGH FREQUENCY TRANSISTOR (CEL)
.. NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • • • • SiGe TECHNOLOGY: fT = 60 GHz Process LOW .

NESG2031M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
.. NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Max.

Stock and price

California Eastern Laboratories (CEL)
RF TRANS NPN 5V 10GHZ 3-MINI
DigiKey
NESG2107M33-T3-A
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts