NESG3032M14 - NPN SILICON GERMANIUM RF TRANSISTOR

California Eastern Labs

NESG3032M14 Datasheet Preview — Preview of NESG3032M14 PDF

Datasheet Details

Part number	NESG3032M14
Manufacturer	California Eastern Labs
File Size	323.67 KB
Description	NPN SILICON GERMANIUM RF TRANSISTOR
Datasheet	NESG3032M14_CaliforniaEasternLabs.pdf

NESG3032M14 Product details

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. While NEC end

Features

The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz.
Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz.
SiGe HBT technology (UHS3) adopted: fmax = 110 GHz.
4-pin lead-less minimold (M14, 1208 package).

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Published: Nov 11, 2009 |