NESG3032M14 Datasheet, Transistor, California Eastern Labs

NESG3032M14 Features

• Transistor
• The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TY

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NESG3032M14

Manufacturer:

California Eastern Labs

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📄 Datasheet

Description:

Npn silicon germanium rf transistor. of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product

NESG3032M14 Application

• Applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconducto

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NESG3032M14

California Eastern Labs

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