NESG3032M14 Datasheet (California Eastern Labs) - NPN SILICON GERMANIUM RF TRANSISTOR

NESG3032M14, NPN SILICON GERMANIUM RF TRANSISTOR

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NESG3032M14 Features

* The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz

* Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz

* SiGe HBT technology (UHS3) adopted: fmax = 110 GHz

* 4-pi