NESG3032M14 Datasheet - California Eastern Labs

NESG3032M14 NPN SILICON GERMANIUM RF TRANSISTOR

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r.

NESG3032M14 Features

* The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz

* Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz

* SiGe HBT technology (UHS3) adopted: fmax = 110 GHz

* 4-pi

NESG3032M14 Datasheet (323.67 KB)