NESG3032M14

NPN SILICON GERMANIUM RF TRANSISTOR

California Eastern Labs

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NESG3032M14 Datasheet (323.67 KB)

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Datasheet Details

Part number:

NESG3032M14

Manufacturer:

California Eastern Labs

File Size:

323.67 KB

Description:

Npn silicon germanium rf transistor

NESG3032M14 Features

* The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz

* Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz

* SiGe HBT technology (UHS3) adopted: fmax = 110 GHz

* 4-pi

NESG3032M14 General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r.

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NESG3032M14 NPN SILICON GERMANIUM TRANSISTOR California Eastern Labs

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NESG3032M14 Distributor

NEC Electronics Group

NESG3032M14-T3

Win Source Electronics

30000 In Stock

Qty : 1850 units

Unit Price : $0.24

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